std18gkxx thyristor-diode modules type std18gk08 STD18GK12 std18gk14 std18gk16 std18gk18 v rrm v drm v 800 1200 1400 1600 1800 v rsm v dsm v 900 1300 1500 1700 1900 dimensions in mm (1mm=0.0394") symbol test conditions maximum ratings unit t vj =t vjm t c =85 o c; 180 o sine 40 18 a t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 400 420 350 370 a i tsm , i fsm t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 800 730 600 570 a 2 s i 2 dt (di/dt) cr 150 500 a/us (dv/dt) cr t vj =t vjm ; v dr =2/3v drm r gk = ; method 1 (linear voltage rise) 1000 v/us p gm t vj =t vjm t p =30us i t =i tavm t p =300us 10 5 w p gav 0.5 w i trms , i frms i tavm , i favm o c t vj t vjm t stg -40...+125 125 -40...+125 v isol 50/60hz, rms t=1min i isol <1ma t=1s 3000 3600 v~ m d mounting torque (m5) terminal connection torque (m5) _ 2.5-4.0/22-35 2.5-4.0/22-35 nm/lb.in. weight 78 g t vj =t vjm repetitive, i t =45a f=50hz, t p =200us v d =2/3v drm i g =0.45a non repetitive, i t =i tavm di g /dt=0.45a/us v rgm 10 v typical p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
thyristor-diode modules symbol test conditions characteristic values unit v v t , v f i t , i f =80a; t vj =25 o c 2.05 v to for power-loss calculations only (t vj =125 o c) 0.85 v r t 18 m v d =6v; t vj =25 o c t vj =-40 o c v gt 1.5 1.6 v v d =6v; t vj =25 o c t vj =-40 o c i gt 100 200 ma v gd t vj =t vjm ; v d =2/3v drm 0.2 v i gd 10 ma i h t vj =25 o c; v d =6v; r gk = 200 ma t vj =25 o c; t p =10us; v d =6v i g =0.45a; di g /dt=0.45a/us 450 ma i l per thyristor/diode; dc current per module r thjc 1.3 0.65 k/w per thyristor/diode; dc current per module r thjk 1.5 0.75 k/w d s creeping distance on surface 12.7 mm d a strike distance through air 9.6 mm a maximum allowable acceleration 50 m/s 2 i rrm , i drm t vj =t vjm ; v r =v rrm ; v d =v drm 3 ma t vj =25 o c; v d =1/2v drm i g =0.45a; di g /dt=0.45a/us t gd 2 us t vj =t vjm ; i t =20a; t p =200us; -di/dt=10a/us typ. v r =100v; dv/dt=20v/us; v d =2/3v drm t q 150 us uc q s t vj =t vjm ; i t , i f =25a; -di/dt=0.64a/us 50 i rm 6 a features * international standard package * glass passivated chips advantages * space and weight savings * simple mounting with two screws * improved temperature and power cycling * reduced protection circuits applications * dc motor control * softstart ac motor controller * light, heat and temperature control * dcb base plate std18gkxx * isolation voltage 3600 v~ * ul file no.e310749 * rohs complian t p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
thyristor-diode modules fig. 3 power dissipation versus on-state current and ambient temperature (per thyristor) fig. 5 three phase rectifier bridge: power dissipation versus direct output current and ambient temperature 10 100 10 00 1 10 100 1000 ma i g s t gd lim i t typ. t vj = 2 5 c 10 0 10 1 10 2 10 3 10 4 0.1 1 10 i g v g ma 1: i gt , t vj = 125 c 2: i gt , t vj = 2 5 c 3: i gt , t vj = - 4 0 c v 4: p g av = 0.5 w 5: p gm = 5 w 6: p gm = 10 w i gd , t vj = 1 2 5 c 3 4 2 1 5 6 fig. 4 gate trigger characteristics fig. 6 gate trigger delay time fig. 1 surge overload current i tsm : crest value, t: duration fig. 2 i 2 dt versus time (1-10 ms) fig. 2a maximum forward current at case temperature 3 x std/sdt18 std18gkxx p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
thyristor-diode modules fig. 7 three phase ac-controller: power dissipation versus rms output current and ambient temperature fig. 8 transient thermal impedance junction to case (per thyristor) r thjc for various conduction angles d: d r thjc (k/w) dc 1.3 180 o c 1.35 120 o c 1.39 60 o c 1.42 30 o c 1.45 constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.018 0.0033 2 0.041 0.0216 3 1.241 0.191 fig. 9 transient thermal impedance junction to heatsink (per thyristor) r thjk for various conduction angles d: d r thjk (k/w) dc 1.5 180 o c 1.55 120 o c 1.59 60 o c 1.62 30 o c 1.65 constants for z thjk calculation: ir thi (k/w) t i (s) 1 0.018 0.0033 2 0.041 0.0216 3 1.241 0.191 4 0.2 0.46 3 x std/sdt18 std/sdt18 std/sdt18 std18gkxx p4 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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